IXFX PLUS 247TM is a high performance N-channel enhancement mode power MOSFET from IXYS. It features low gate resistance, high dV/dt and low trr, and is suitable for applications such as DC-DC converters, switched-mode and resonant-mode power supplies, DC choppers and pulse power supplies.
The IXFX 24N100F is a high‑frequency, N‑channel enhancement‑mode power MOSFET designed for MegaHertz switching applications. It features a 1000 V drain‑source rating, low on‑resistance, fast switching (<250 ns), and a low gate charge of 0.39 nC, making it suitable for DC‑DC converters, pulse generation, and laser driver circuits.
The device is supplied in a TO‑264AA package with a mounting torque of 0.4 N·m and a thermal resistance of 0.4 °C/W. Electrical characteristics are given for a test temperature of 25 °C unless otherwise noted, and the datasheet includes detailed curves for output characteristics, gate charge, capacitances, and thermal impedance.