This document is about the characteristics of IXFN 170N10, including package, function, application scenarios, advantages, etc.
The IXFN170N10 is a high‑power, single‑die MOSFET offered in international standard packages such as miniBLOC SOT‑227 B and TO‑264 AA. It features an encapsulating epoxy (UL94V‑0), low on‑resistance, rugged polysilicon gate cell, and an unclamped inductive switching rating.
Typical applications include DC‑DC converters, synchronous rectification, battery chargers, switched‑mode and resonant‑mode power supplies, DC choppers, temperature and lighting controls, and low‑voltage relays. The device delivers high power density, easy mounting, and space‑saving benefits.
| Continuous Drain Current (I_D) | 20 A |
|---|---|
| Maximum Power Dissipation (P_D) | 560 W |
| Weight | 10 g |
Typical uses include DC‑DC converters, synchronous rectification, battery chargers, switched‑mode and resonant‑mode power supplies, DC choppers, temperature and lighting controls, and low‑voltage relays.