IXYS IXFX 21N100F / IXFK 21N100F Power MOSFET Datasheet

PLUS 247TM is a high-frequency switching power MOSFET produced by IXYS company. It has the characteristics of low Qg, low Rg, high dV/dt, low trr and is suitable for DC-DC converters, switch-mode power supplies, choppers and other applications.


IXYS IXFX 21N100F / IXFK 21N100F Power MOSFET Datasheet - cover page
Brand
IXYS
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
2
File format
PDF
File size
99 KB
Published
11 April, 2012
Updated
01 October, 2023
MD5 checksum
B318B792A8CCE322DB4761379681C7A7

About this manual

The IXFX 21N100F and IXFK 21N100F are N‑channel enhancement mode Power MOSFETs designed for high‑frequency switching applications. They feature a double‑metal process for low gate resistance, an unclamped inductive switching (UIS) rating, and a low‑inductance TO‑264 AA package for easy mounting.

Typical uses include DC‑DC converters, switched‑mode and resonant‑mode power supplies operating above 500 kHz, DC choppers, 13.5 MHz industrial circuits, pulse generation, laser drivers, and RF amplifiers. The datasheet lists maximum ratings, test conditions, and mechanical dimensions for design reference.

What's inside

  • Features
  • Applications
  • Advantages
  • Maximum Ratings
  • Test Conditions
  • Package Outline
  • Electrical Characteristics

Specifications

Drain‑Source Voltage (V_DSS)1000 V
Pulsed Drain Current (I_DM) @ 25 °C84 A
Power Dissipation (P_D) @ 25 °C500 W
PackageTO‑264 AA

Frequently asked questions

What is the maximum drain‑source voltage for the IXFX/IXFK 21N100F MOSFET?

The device is rated for a maximum V_DSS of 1000 V.

Which package is used for the IXFK 21N100F?

The MOSFET is supplied in a TO‑264 AA package.

What are typical applications for the IXFX/IXFK 21N100F?

Typical applications include DC‑DC converters, switched‑mode and resonant‑mode power supplies, DC choppers, 13.5 MHz industrial circuits, pulse generation, laser drivers, and RF amplifiers.

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