FQPF19N10 100V N-Channel MOSFET is a kind of N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor. It has low on-state resistance, excellent switching performance and high energy pulse withstand capability. This device is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
The FQPF19N10 MOSFET is an N‑Channel enhancement mode power transistor built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as audio amplifiers, high‑efficiency DC/DC converters, and DC motor control.
Key specifications include a 100 V drain‑source rating, 13.6 A continuous drain current at 25 °C, 54.4 A pulsed current, low gate charge of 19 nC, on‑resistance of 0.078 Ω, and an operating temperature range from –55 °C to +175 °C. The device is packaged in a TO‑220F case and meets stringent avalanche and dv/dt requirements.
| Drain-Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (25 °C) | 13.6 A |
| Pulsed Drain Current | 54.4 A |
| Typical Gate Charge | 19 nC |
| On‑Resistance (RDS(on)) | 0.078 Ω |
| Thermal Resistance, Junction‑to‑Case | 3.95 °C·W |
| Operating Temperature Range | -55 °C to +175 °C |
| Maximum Power Dissipation (25 °C) | 38 W |
The device is rated for a maximum drain‑source voltage of 100 V.
The continuous drain current is 13.6 A at a junction temperature of 25 °C.
The typical gate charge is 19 nC.
The MOSFET can operate up to +175 °C.