FQPF17N08L is a 80V logic N-channel MOSFET produced by Fairchild Semiconductor International. This device has low on-state resistance, high efficiency switching performance and high energy pulse withstandability, and is suitable for low voltage applications such as automotive, DC/DC converters and DC motor control.
This datasheet describes the Fairchild FQPF17N08L, an 80 V N‑Channel enhancement‑mode MOSFET designed for low‑voltage, high‑efficiency switching applications such as automotive motor control and DC‑DC converters. It highlights the device’s low on‑resistance, fast switching, and robust avalanche capability.
Key sections cover absolute maximum ratings, detailed electrical characteristics (drain current, gate charge, capacitances), typical performance curves, test circuit configurations, and mechanical package dimensions for the TO‑220F housing. Legal notices and product status definitions conclude the document.
| Drain‑Source Voltage (V_DSS) | 80 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 11.2 A |
| Continuous Drain Current (I_D) @ 100 °C | 79 A |
| Pulsed Drain Current | 44.8 A |
| Gate‑Source Voltage (V_GS) | ±20 V |
| Power Dissipation (P_D) @ 25 °C | 30 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 5.0 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C/W |
| Maximum Junction Temperature | 175 °C |
| Typical Gate Charge (Q_g) | 8.8 nC |
The device is rated for a maximum drain‑source voltage of 80 V.
The typical gate charge is about 8.8 nC.
The MOSFET can operate up to a junction temperature of 175 °C.
It is supplied in a TO‑220F package.