Dinghao stock inventory, technical data, encyclopedia information, hot news
The Fairchild FQPF16N25 is a 250 V N‑Channel enhancement‑mode power MOSFET designed for high‑efficiency switching in DC‑DC converters and switch‑mode power supplies.
The datasheet lists absolute maximum ratings such as 250 V VDS, 9.5 A continuous drain current at 25 °C, 38 A pulsed current, and 50 W power dissipation, along with thermal resistances of 2.5 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient). Package dimensions are given for the TO‑220F case.
| Drain-Source Voltage (VDS) | 250 V |
|---|---|
| Continuous Drain Current (Id) @ 25°C | 9.5 A |
| Pulsed Drain Current (Id) | 38 A |
| Gate-Source Voltage (VGS) | ±30 V |
| Power Dissipation (PD) @ 25°C | 50 W |
| Junction-to-Case Thermal Resistance | 2.5 °C·W |
| Junction-to-Ambient Thermal Resistance | 62.5 °C·W |
| Total Gate Charge (Qg) | 27 nC (typical) |
| Single Pulse Avalanche Energy | 560 mJ |
| Package Type | TO-220F |
The maximum continuous drain current at 25 °C is 9.5 A.
The FQPF16N25 is supplied in a TO‑220F package.
The typical total gate charge is 27 nC.
The single‑pulse avalanche energy rating is 560 mJ.