FQPF17N08 80V N-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor. It features low on-state resistance, superior switching performance and high energy pulse resistance. It is suitable for low voltage applications such as automotive, DC/DC converters and DC motor control.
The FQPF17N08 is an N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance and fast switching, making it suitable for low‑voltage automotive, DC‑DC converter and motor‑control applications.
Key electrical specifications include an 80 V drain‑source rating, 11.2 A continuous drain current at 25 °C, 0.115 Ω typical on‑resistance at VGS = 10 V, and a low gate charge of about 12 nC. The device is supplied in a TO‑220F package with thermal resistance of 5.0 °C·W (junction‑to‑case) and operates from –55 °C to +175 °C.
| Drain‑Source Voltage (V_DSS) | 80 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 11.2 A |
| Pulsed Drain Current (I_DM) | 44.8 A |
| On‑Resistance (R_DS(on)) typical | 0.115 Ω @ VGS=10 V |
| Gate Charge (Qg) typical | 12 nC |
| Reverse Transfer Capacitance (Crss) typical | 28 pF |
| Power Dissipation (P_D) @ 25 °C | 30 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 5.0 °C·W |
| Operating Temperature Range | -55 °C to +175 °C |
| Package | TO‑220F |
The device is rated for a maximum drain‑source voltage of 80 V.
It can conduct up to 11.2 A continuously at a case temperature of 25 °C.
Typical on‑resistance is 0.115 Ω when VGS = 10 V.
The MOSFET is supplied in a TO‑220F package.