FQPF17N08L is an 80V N-Channel logic MOSFET produced by Fairchild Semiconductor International. The device features low on-state resistance, superior switching performance and high energy pulse tolerance, and is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
The FQPF17N08L is an 80 V logic‑level N‑Channel MOSFET built with Fairchild's planar stripe DMOS technology. It offers low on‑state resistance, low gate charge, and robust avalanche performance, making it suitable for low‑voltage, high‑efficiency switching applications such as motor control and DC‑DC converters.
Key electrical characteristics include a continuous drain current of 11.2 A at 25 °C, pulsed current capability of 44.8 A, gate‑source voltage rating of ±20 V, and a typical total gate charge of 8.8 nC. The device is supplied in a TO‑220F package with a junction‑to‑case thermal resistance of 5 °C·W and a junction‑to‑ambient resistance of 62.5 °C·W.
| Drain-Source Voltage (VDS) | 80 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 11.2 A |
| Pulsed Drain Current (ID) (Note 1) | 44.8 A |
| Gate-Source Voltage (VGS) Rating | ±20 V |
| Power Dissipation (PD) @ 25 °C | 30 W |
| Junction-to-Case Thermal Resistance (RθJC) | 5.0 °C·W |
| Junction-to-Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Typical Total Gate Charge (Qg) | 8.8 nC |
The device is rated for a maximum drain‑source voltage of 80 V.
It can conduct a continuous drain current of 11.2 A at a case temperature of 25 °C.
The typical total gate charge is 8.8 nC.