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The FQPF17N40 MOSFET is built with Fairchild’s planar stripe DMOS technology, offering a 400 V drain‑source rating, 9.5 A continuous drain current at 25 °C, and a low on‑resistance of 0.272 Ω at VGS = 10 V. It is designed for high‑efficiency switch‑mode power supplies and half‑bridge lamp ballast applications.
The device is supplied in a TO‑220F package, supports a gate‑source voltage of up to +30 V, and includes specifications such as low gate charge (≈45 nC), low output capacitance, and robust avalanche capability. Thermal management is aided by a junction‑to‑case resistance of 2.23 °C/W and a junction‑to‑ambient resistance of 62.5 °C/W.
| Drain‑Source Voltage (VDS) | 400 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 9.5 A |
| Pulsed Drain Current (ID) @ 100 °C | 38 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) @ VGS=10 V | 0.272 Ω |
| Gate Charge (Qg) | 45 nC (typical) |
| Output Capacitance (Coss) | 270 pF (typical) |
| Power Dissipation (PD) @ 25 °C | 56 W |
| Thermal Resistance Junction‑to‑Case | 2.23 °C/W |
| Thermal Resistance Junction‑to‑Ambient | 62.5 °C/W |
| Operating Temperature Range | -55 °C to +150 °C |
| Package | TO‑220F |
The device is rated for a maximum drain‑source voltage of 400 V.
It can conduct up to 9.5 A continuously at a case temperature of 25 °C.
The on‑resistance is 0.272 Ω when the gate‑source voltage is 10 V.
The MOSFET is supplied in a TO‑220F package.