This document describes the features and characteristics of the FQPF17P06 60V P-Channel MOSFET produced by Fairchild. It adopts advanced DMOS technology, has low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for low voltage applications such as automotive, DC/DC converters, and high-efficiency switching for power management in portable and battery-operated products.
The FQPF17P06 is a P‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑state resistance, fast switching, and high avalanche capability, making it suitable for low‑voltage applications such as automotive and DC‑DC converters.
The document provides absolute maximum ratings, thermal characteristics, electrical parameters, typical performance curves, and test circuit diagrams, along with package dimensions and trademark information.
| Drain‑Source Voltage (V_DSS) | -60 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -12 A |
| Pulsed Drain Current (I_D(pulse)) | -48 A |
| Gate‑Source Voltage (V_GS) | +25 V |
| Power Dissipation (P_D) at 25 °C | 39 W |
| Maximum Junction Temperature (T_J) | 175 °C |
| Operating Temperature Range | -55 °C to +175 °C |
| Junction‑to‑Case Thermal Resistance (RθJC) | 3.85 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Typical Gate Charge (Q_G) | 21 nC |
The device is rated for a maximum drain‑source voltage of -60 V.
It can conduct up to -12 A continuously at a junction temperature of 25 °C.
The maximum power dissipation is 39 W when the case temperature is 25 °C.
It operates from -55 °C up to +175 °C.