This product is a 60V P-channel MOSFET with -12A, -60V, RDS(on) = 0.12Ω @VGS = -10 V, low gate charge (typical 21 nC), low Crss (typical 80 pF), fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating
The FQPF17P06 is a P‑Channel enhancement‑mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC/DC converters and portable power management, offering low on‑state resistance, fast switching and high avalanche capability.
Key electrical specifications include a -60 V drain‑source rating, -12 A continuous drain current at 25 °C (‑8.5 A at 100 °C), typical on‑resistance of 0.122 Ω at VGS = -10 V, gate charge of 21 nC, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package with thermal resistance values of 3.85 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient).
| Drain‑Source Voltage (V_DSS) | -60 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -12 A |
| Continuous Drain Current (I_D) at 100 °C | -8.5 A |
| Pulsed Drain Current | -48 A |
| Gate‑Source Voltage (V_GS) | +25 V |
| On‑Resistance (R_DS(on)) typical | 0.122 Ω |
| Gate Charge (Q_g) typical | 21 nC |
| Output Capacitance (C_oss) typical | 325 pF |
| Reverse Transfer Capacitance (C_rss) typical | 80 pF |
| Maximum Junction Temperature | 175 °C |
| Thermal Resistance Junction‑to‑Case | 3.85 °C·W |
| Thermal Resistance Junction‑to‑Ambient | 62.5 °C·W |
| Package | TO‑220F |
The device can handle a continuous drain current of -12 A at 25 °C.
The FQPF17P06 is rated for a maximum junction temperature of 175 °C.
It is supplied in a TO‑220F package.
The typical gate charge is 21 nC.