This file introduces dinghao's inventory, technical data, encyclopedia information, hot news and other information.
The FQPF17N40 is a 400 V N‑Channel MOSFET built with Fairchild’s planar stripe DMOS technology, offering low on‑state resistance, fast switching, and high avalanche capability. It is intended for high‑efficiency switch‑mode power supplies and half‑bridge lamp ballast applications.
Key specifications include a 400 V drain‑source rating, 9.5 A continuous drain current at 25 °C, 38 A pulsed current, ±30 V gate‑source limit, 56 W power dissipation, and a TO‑220F package. Detailed electrical, thermal, and switching characteristics are provided for design engineers.
| Drain‑Source Voltage (V_DSS) | 400 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 9.5 A |
| Pulsed Drain Current (I_D) (Note 1) | 38 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) @ 25 °C | 56 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.23 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Input Capacitance (Ciss) | 1800–2300 pF |
| Output Capacitance (Coss) | 270–350 pF |
| Total Gate Charge (Qg) | 45–60 nC |
| Typical Gate Charge | 45 nC |
| Package Type | TO‑220F |
The device is rated for a maximum drain‑source voltage of 400 V.
It can conduct up to 9.5 A continuously at a case temperature of 25 °C.
The MOSFET is supplied in a TO‑220F package.
The typical gate charge is about 45 nC.