FQPF17P10 is a P-channel MOSFET produced by Fairchild. Its features are low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability, 175°C maximum junction temperature rating.
The FQPF17P10 is a P‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as audio amplifiers, high‑efficiency DC‑DC converters and DC motor control.\n\nKey electrical specifications include a drain‑source voltage rating of -100 V, continuous drain current of -10.5 A at 25 °C, pulsed drain current of -42 A, gate‑source voltage of +30 V, typical on‑resistance of 0.192 Ω at Vgs = -10 V, total gate charge of 30 nC, and a maximum junction temperature of 175 °C.
| Drain‑Source Voltage (Vds) | -100 V |
|---|---|
| Continuous Drain Current (Id) at 25 °C | -10.5 A |
| Pulsed Drain Current | -42 A |
| Gate‑Source Voltage (Vgs) | +30 V |
| On‑Resistance (Rds(on)) | 0.192 Ω (typical at Vgs = -10 V) |
| Total Gate Charge (Qg) | 30 nC (typical) |
| Input Capacitance (Ciss) | 850 pF (typical) |
| Output Capacitance (Coss) | 310 pF (typical) |
| Reverse Transfer Capacitance (Crss) | 100 pF (typical) |
| Junction‑to‑Case Thermal Resistance (RθJC) | 3.66 °C·W |
| Maximum Junction Temperature | 175 °C |
| Power Dissipation (Pd) at 25 °C | 41 W |
The device can handle a continuous drain current of -10.5 A at a case temperature of 25 °C.
The pulsed drain current rating is -42 A.
The device is rated for a maximum junction temperature of 175 °C.
Typical on‑resistance is 0.192 Ω when Vgs = -10 V.