This document describes the N-Channel enhancement mode power field effect transistors of FQP16N25C/FQPF16N25C model produced by Fairchild Semiconductor Corporation. These transistors use Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies, and motor controls.
The Fairchild FQP16N25C and FQPF16N25C are N‑Channel enhancement mode power MOSFETs designed for high‑efficiency switching applications such as DC‑DC converters, SMPS, UPS and motor controls. They feature low on‑state resistance, low gate charge and fast dv/dt capability.
The document provides absolute maximum ratings, electrical characteristics, thermal data, package dimensions (TO‑220/TO‑220F) and test circuit waveforms. It also includes trademark, disclaimer and product status information.
| Drain‑Source Voltage (VDS) | 250 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 15.6 A |
| Pulsed Drain Current (ID) @ 100 °C | 62.4 A |
| Gate‑Source Voltage (VGS) | 30 V |
| Junction‑to‑Case Thermal Resistance (RθJC) | 0.9 °C·W |
The MOSFET is rated for a maximum drain‑source voltage of 250 V.
It is offered in TO‑220 and TO‑220F packages.
No, Fairchild’s products are not authorized for use as critical components in life‑support devices without written approval.