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The FQPF16N25 is a 250 V N‑Channel enhancement‑mode power MOSFET built with Fairchild's planar stripe DMOS technology. It offers low gate charge, low output capacitance, fast switching, and high avalanche capability, making it suitable for high‑efficiency DC‑DC converters and switch‑mode power supplies.
The document lists absolute maximum ratings, thermal characteristics, detailed electrical parameters, typical characteristic curves, and package dimensions for the TO‑220F package. Test circuits for gate charge, resistive switching, and diode recovery are also included.
| Drain‑Source Voltage (V_DSS) | 250 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 9.5 A |
| Pulsed Drain Current (I_D) (Note 1) | 38 A |
| Gate‑Source Voltage (V_GS) | 30 V |
| Power Dissipation (P_D) at 25 °C | 50 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.5 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
The device is rated for a maximum drain‑source voltage of 250 V.
It can conduct up to 9.5 A continuously at a case temperature of 25 °C.
The maximum gate‑source voltage is 30 V.
The MOSFET can dissipate up to 50 W when the case temperature is 25 °C.