FQPF17P10 is a P-Channel MOSFET power field effect transistor with features of low current, low voltage, and fast switching. It is suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
The FQPF17P10 is a 100 V P‑Channel enhancement mode MOSFET built with Fairchild's planar stripe DMOS technology. It offers low on‑state resistance, low gate charge, fast switching, and high avalanche capability, making it suitable for low‑voltage applications such as audio amplifiers, DC‑DC converters, and motor control.
The datasheet includes absolute maximum ratings, thermal characteristics, detailed electrical parameters, typical performance curves, test circuit diagrams, and mechanical dimensions for the TO‑220F package. It also contains legal notices, trademark information, and product status definitions.
| Drain‑Source Voltage (V_DSS) | -100 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -10.5 A |
| Pulsed Drain Current (I_D(pulse)) | -42 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| On‑Resistance (R_DS(on)) | 0.192 Ω @ V_GS = -10 V |
| Total Gate Charge (Q_g) | 30 nC (typical) |
| Thermal Resistance Junction‑to‑Case (RθJC) | 3.66 °C/W |
The device is rated for a maximum drain‑source voltage of -100 V.
It can conduct up to -10.5 A continuously at a case temperature of 25 °C.