The FQP18N20V2/FQPF18N20V2 is a Fairchild N-channel enhancement mode power field effect transistor that features low on-state resistance, superior switching performance, and high energy pulse withstand capability. These devices are well suited for low voltage applications such as automotive, high efficiency DC/DC converters, and DC motor control.
The FQP18N20V2 and FQPF18N20V2 are N‑Channel enhancement mode power MOSFETs built with Fairchild’s planar stripe DMOS technology. They are designed for low‑voltage applications such as automotive, DC‑DC converters, and DC motor control, offering low on‑state resistance, fast switching, and high avalanche capability.
Key specifications include a 200 V drain‑source rating, 18 A continuous drain current at 25 °C, 72 A pulsed current, typical gate charge of 20 nC, and on‑resistance of 0.12‑0.14 Ω. The devices are supplied in TO‑220 and TO‑220F packages with a junction‑to‑case thermal resistance of 1.01 °C·W and an operating temperature range of –55 °C to +150 °C.
| Drain‑Source Voltage (V_DSS) | 200 V |
|---|---|
| Typical Gate Charge | 20 nC |
| On‑Resistance (R_DS(on)) | 0.12‑0.14 Ω |
| Junction‑to‑Case Thermal Resistance | 1.01 °C·W |
| Package | TO‑220 (TO‑220F) |
| Operating Temperature Range | -55 °C to +150 °C |
The device is rated for a maximum drain‑source voltage of 200 V.
Both parts are offered in a TO‑220 (and TO‑220F) package.
The typical gate charge is about 20 nC.