The FQPF17N08 is an N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is intended for low‑voltage applications such as automotive, DC‑DC converters, and motor control.
Key electrical specifications include an 80 V drain‑source rating, 11.2 A continuous drain current at 25 °C, 0.115 Ω typical on‑resistance at Vgs = 10 V, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and features low gate charge and fast switching performance.
| Drain‑Source Voltage (VDS) | 80 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 11.2 A |
| On‑Resistance (RDS(on)) typical | 0.115 Ω @ VGS=10 V |
| Gate Charge (Qg) typical | 12 nC |
| Maximum Junction Temperature | 175 °C |
| Power Dissipation (PD) at 25 °C | 30 W |
| Thermal Resistance Junction‑to‑Case | 0.5 °C/W |
| Thermal Resistance Junction‑to‑Ambient | 62.5 °C/W |
| Package | TO‑220F |
The device is rated for a maximum drain‑source voltage of 80 V.
It can conduct up to 11.2 A continuously at a junction temperature of 25 °C.
The MOSFET is supplied in a TO‑220F package.
The device can operate up to a junction temperature of 175 °C.