This document describes the features and characteristics of the FQP15P12/FQPF15P12 P-Channel MOSFET products, including low voltage applications, low on-state resistance, fast switching, and high temperature tolerance.
The FQP15P12 and FQPF15P12 are P‑Channel enhancement mode power MOSFETs built with Fairchild’s planar stripe DMOS technology. They are intended for low‑voltage applications such as audio amplifiers, high‑efficiency switching DC/DC converters, and DC motor control.
The datasheet lists key specifications including a continuous drain current of –15 A, a gate‑source voltage rating of +30 V, typical on‑resistance of 0.17 Ω, total gate charge of 29 nC, and a maximum junction temperature of 175 °C. Package information for the TO‑220 and TO‑220F variants, along with thermal resistance values and dimensional drawings, are also provided.
| Gate‑Source Voltage (V_GS) | +30 V |
|---|---|
| Typical On‑Resistance (R_DS(on)) | 0.17 Ω |
| Maximum Junction Temperature | 175 °C |
| Thermal Resistance, Junction‑to‑Case | 1.5 °C/W |
| Package Type | TO‑220 / TO‑220F |
The maximum gate‑source voltage is +30 V.
Typical on‑resistance is about 0.17 Ω.
It is supplied in a TO‑220 package, with a TO‑220F variant also listed.