This document introduces the FQPF13N10L QFET product released by Fairchild Semiconductor International in December 2000. The product is an N-channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse withstand capability, making it ideal for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.
The FQPF13N10L is a 100 V logic N‑Channel MOSFET built with Fairchild’s DMOS planar stripe technology. It is designed for low‑voltage, high‑efficiency switching applications such as DC‑DC converters and motor control.
Key features include an 8.7 A continuous drain current at 25 °C, low gate charge (≈8.7 nC), low output capacitance (≈20 pF), fast switching, 100 % avalanche testing, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package with detailed thermal and electrical characteristics provided in the datasheet.
| Drain‑Source Voltage (V_DSS) | 100 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 8.7 A |
| Pulsed Drain Current | 34.8 A |
| Gate‑Source Voltage (V_GS) | ±20 V |
| Maximum Power Dissipation @ 25 °C | 30 W |
| Operating Temperature Range | -55 °C to +175 °C |
| Thermal Resistance Junction‑to‑Case | 5.0 °C·W |
| Thermal Resistance Junction‑to‑Ambient | 62.5 °C·W |
The device is rated for a maximum drain‑source voltage of 100 V.
It can conduct up to 8.7 A continuously at a case temperature of 25 °C.