The document introduces the inventory, technical information, encyclopedia information, and hot news of Dinghao Company. Among them, QFET products are characterized by high quality and high performance.
The FQPF14N15 is a 150 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as audio amplifiers, DC‑DC converters and motor control, offering low gate charge, low output capacitance and fast switching.
Key electrical specifications include a continuous drain current of 9.8 A at 25 °C, a maximum drain‑source voltage of 150 V, a gate‑source rating of 25 V, and a power dissipation of 48 W. The device is supplied in a TO‑220F package with a junction‑to‑case thermal resistance of 3.13 °C·W and a junction‑to‑ambient resistance of 62.5 °C·W.
| Drain-Source Voltage (VDS) | 150 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 9.8 A |
| Gate-Source Voltage (VGS) Rating | 25 V |
| Power Dissipation (PD) at 25 °C | 48 W |
| Junction-to-Case Thermal Resistance (RθJC) | 3.13 °C·W |
| Junction-to-Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Package Type | TO-220F |
| Maximum Junction Temperature | 175 °C |
The FQPF14N15 can handle a continuous drain current of 9.8 A at 25 °C.
The device is rated for a maximum junction temperature of 175 °C.
It is supplied in a TO‑220F package.