This document describes the features of the FQPF140N03L 30V logic N-channel MOSFET product. The product is produced using Fairchild's proprietary DMOS technology, which provides low on-state resistance, superior switching performance, and the ability to withstand high-energy pulses. It is suitable for low-voltage applications such as DC/DC converters and high-efficiency switching for power management in portable and battery-operated products.
The FQPF140N03L is a 30 V logic N‑Channel MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as DC/DC converters and high‑efficiency power management in portable and battery‑operated products.
Key specifications include an 82 A continuous drain current at 25 °C, 330 A pulsed capability, low gate charge (typical 73 nC), low output capacitance, and a TO‑220F package. The device offers a maximum power dissipation of 62 W and operates from –55 °C to +175 °C.
| Drain‑Source Voltage (V_DSS) | 30 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 82 A |
| Pulsed Drain Current | 330 A |
| Gate‑Source Voltage (V_GS) | ±20 V |
| On‑Resistance (R_DS(on)) typical | 0.0045 Ω |
| Typical Gate Charge (Q_g) | 73 nC |
| Reverse Transfer Capacitance (C_rss) typical | 580 pF |
| Maximum Power Dissipation (P_D) @ 25 °C | 62 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.42 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C/W |
| Operating Temperature Range | -55 °C to +175 °C |
The device can handle 82 A continuous drain current at 25 °C (58 A at 100 °C).
The typical gate charge is 73 nC.
It is supplied in a TO‑220F package.
The MOSFET is rated for a maximum drain‑source voltage of 30 V.