The document is about product information from Dinghao company, including stock inventory, technical data, encyclopedia information, and hot news. The products feature the use of QFET technology, providing high performance and stability.
The FQPF14N15 is a 150 V N‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as audio amplifiers, DC‑DC converters and motor control, offering low on‑state resistance and fast switching.
Key specifications include a continuous drain current of 9.8 A at 25 °C, a pulsed drain current rating of 39.2 A, typical gate charge of 18 nC, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and is 100 % avalanche tested.
| Drain‑Source Voltage (VDS) | 150 V |
|---|---|
| Continuous Drain Current (25 °C) | 9.8 A |
| Typical Gate Charge | 18 nC |
| On‑Resistance (RDS(on)) | 0.219 Ω @ VGS=10 V |
| Maximum Junction Temperature | 175 °C |
| Package | TO‑220F |
The maximum drain‑source voltage is 150 V.
It can handle a continuous drain current of 9.8 A at 25 °C.
The typical gate charge is 18 nC.
The device is supplied in a TO‑220F package.