This document describes the features and characteristics of the FQPF13N10L N-Channel enhancement mode power field effect transistor, including low on-state resistance, superior switching performance, ability to withstand high energy pulses, and improved dv/dt capability. These devices are suitable for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.
The FQPF13N10L is a 100 V logic N‑Channel MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low gate charge, low output capacitance, fast switching, and a 175 °C maximum junction temperature, making it suitable for high‑efficiency DC‑DC converters and motor‑control circuits.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, and package dimensions for the TO‑220F case. It also includes test circuit diagrams and trademark information.
| Drain‑Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 8.7 A |
| Pulsed Drain Current (ID) (Note 1) | 34.8 A |
| Gate‑Source Voltage (VGS) | ±20 V |
| Power Dissipation (PD) @ 25 °C | 30 W |
| Maximum Junction Temperature | 175 °C |
| Thermal Resistance Junction‑to‑Case (RJC) | 5.0 °C·W |
| Thermal Resistance Junction‑to‑Ambient (RJA) | 62.5 °C·W |
The maximum continuous drain current at 25 °C is 8.7 A.
The device is rated for a maximum junction temperature of 175 °C.
The drain‑source breakdown voltage is specified as 100 V.
The part can dissipate up to 30 W at a case temperature of 25 °C.