This document describes the features of FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET, including 13A rated current, low gate charge, fast switching speed, 100% avalanche tested, improved dv/dt capability, etc.
The FQP13N50CF and FQPF13N50CF are 500 V N‑Channel enhancement‑mode power MOSFETs featuring low gate charge (≈43 nC), low output capacitance (≈20 pF) and fast switching performance. They are designed for high‑efficiency switched‑mode power supplies and active power‑factor correction applications.
The datasheet provides absolute maximum ratings, thermal characteristics, electrical parameters, typical performance curves, and mechanical dimensions for the TO‑220 and TO‑220F packages. Test circuit diagrams for gate charge, switching, and diode recovery are also included.
| Drain‑Source Voltage (VDS) | 500 V |
|---|---|
| Gate‑Source Voltage (VGS) | +30 V |
| Reverse Transfer Capacitance (Crss) | 20 pF |