FQP13N50C/FQPF13N50C is a 500V N-channel MOSFET produced by Fairchild Semiconductor Corporation. It features low gate charge, low Crss, fast switching, 100% avalanche testing and improved dv/dt capability.
The FQP13N50C and FQPF13N50C are 500 V N‑Channel enhancement mode power MOSFETs fabricated with Fairchild’s planar stripe DMOS technology. The devices are optimized for low on‑state resistance, fast switching, and high‑energy pulse capability, making them suitable for switched‑mode power supplies and power factor correction circuits.
Key specifications include a continuous drain current of 13 A at 25 °C, a pulsed drain current of 52 A, typical on‑resistance of 0.48 Ω, gate charge of 43 nC, and a thermal resistance of 0.64 °C·W (junction‑to‑case). Package options are TO‑220 and TO‑220F, with detailed mechanical dimensions provided.
| Drain‑Source Voltage (VDS) | 500 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 13 A |
| Continuous Drain Current (ID) @ 100 °C | 8 A |
| Pulsed Drain Current (ID) (Note 1) | 52 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| On‑Resistance (RDS(on)) typical | 0.48 Ω |
| Power Dissipation (PD) @ 25 °C | 195 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.64 °C·W |
The device is rated for a maximum drain‑source voltage of 500 V.
Typical on‑resistance is 0.48 Ω at VGS = 10 V.
The continuous drain current is 13 A at a case temperature of 25 °C.