This document mainly introduces the features and characteristics of QFET products.
The FQPF11N40 is a 400 V N‑Channel enhancement mode power MOSFET designed with Fairchild's planar stripe DMOS technology. It features low gate charge (typical 27 nC), low output capacitance (typical 20 pF), fast switching, and 100 % avalanche testing, making it suitable for high‑efficiency switch‑mode power supplies and lamp ballasts.
The datasheet provides absolute maximum ratings, thermal characteristics, and extensive electrical parameters such as drain‑source voltage, continuous and pulsed drain current, gate‑source voltage, power dissipation, and various capacitances. Package information (TO‑220F) and typical characteristic curves are also included.
| Drain‑Source Voltage (VDS) | 400 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 6.6 A |
| Pulsed Drain Current (ID) (Note 1) | 26 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| Power Dissipation (PD) @ 25 °C | 50 W |
| Junction‑to‑Case Thermal Resistance (RJC) | 2.5 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RJA) | 62.5 °C/W |
| Typical Gate Charge (Qg) | 27 nC |
The device is rated for a maximum drain‑source voltage of 400 V.
It can conduct up to 6.6 A continuously at a case temperature of 25 °C.
The typical gate charge is 27 nC.
The MOSFET is supplied in a TO‑220F package.