This document introduces the technical characteristics, application areas, current stock and technical data of DINGHAO Technology QFET products.
The FQPF11N40 is a 400 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low gate charge, low output capacitance, fast switching and high avalanche capability, making it suitable for high‑efficiency switch‑mode power supplies and lamp ballast applications.
Key electrical specifications include a continuous drain current of 6.6 A at 25 °C, a pulsed drain current rating of 26 A, a gate‑source voltage rating of ±30 V, and a power dissipation of 50 W. The device is supplied in a TO‑220F package with a junction‑to‑case thermal resistance of 2.5 °C·W and a junction‑to‑ambient resistance of 62.5 °C·W.
| Drain‑Source Voltage (V_DSS) | 400 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 6.6 A |
| Pulsed Drain Current (I_D) @ 100 °C | 26 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) @ 25 °C | 50 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.5 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
The device can withstand a drain‑source voltage of up to 400 V.
It is rated for a continuous drain current of 6.6 A at 25 °C.