BC856W, BC857W, BC858W, BC859W and BC860W are PNP Silicon AF transistors. They are for AF input stages and driver applications. They feature high current gain, low collector-emitter saturation voltage and low noise between 30Hz and 15kHz. These PNP transistors are complementary types to BC846W, BC847W, BC848W, BC849W and BC850W (NPN).
This datasheet provides detailed specifications for Infineon's BC856W through BC860W series of PNP silicon AF transistors. It includes maximum voltage and current ratings, power dissipation limits, and noise performance.
The document also describes the SOT323 package dimensions, footprint, and marking layout, as well as AC characteristics such as transition frequency and capacitances. Legal and contact information for Infineon Technologies AG is included at the end.
| Collector‑base voltage (VCBO) | 80 V |
|---|---|
| DC collector current (IC) | 100 mA |
| Peak collector current | 200 mA |
| Total power dissipation | 250 mW |
| Transition frequency (fT) | 250 MHz |
| Collector‑base capacitance (Ccb) | 3‑5 pF |
| Noise figure | 10 dB |
They are supplied in an SOT323 surface‑mount package.
The typical DC collector current rating is 100 mA.
The transition frequency is specified as 250 MHz.