IPB60R165CP CoolMOS® Power Transistor is a product with lowest RONxQg, ultra low gate charge, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1） for target applications, Pb-free lead plating, RoHS compliant.
The IPB60R165CP is a CoolMOS® power transistor designed for high‑performance applications such as hard‑switching topologies in server and telecom equipment. It offers ultra‑low gate charge, high peak current capability, and is RoHS‑compliant.
The datasheet lists key electrical parameters (continuous drain current 21 A, pulsed drain current 61 A), thermal characteristics (junction‑to‑case resistance 0.65 K·W⁻¹, operating temperature –55 °C to 150 °C), and mechanical dimensions (TO‑263 package). It also includes typical output and transfer characteristics, gate‑charge curves, and diode switching data.
| Continuous drain current (Id) at 25 °C | 21 A |
|---|---|
| Pulsed drain current (Id) at 25 °C | 61 A |
| Maximum power dissipation (P_D) at 25 °C | 192 W |
| Operating temperature range | -55 °C to 150 °C |
| Typical on‑state resistance (Rds(on)) at 25 °C | 0.15 Ω |
| Gate charge total (Qg) | 39 nC |
| Input capacitance (Ciss) | 2000 pF |
| Output capacitance (Coss) | 100 pF |
| Avalanche energy (single pulse) | 522 mJ |
The maximum continuous drain current is 21 A at 25 °C.
The typical drain‑source on‑state resistance is 0.15 Ω at 25 °C.
It can operate from –55 °C up to 150 °C.
The total gate charge is 39 nC.