Infineon BC846‑BC850 NPN Silicon AF Transistors Datasheet

BC846, BC850 are NPN Silicon AF transistors, mainly used for AF input stages and driver applications. They feature high current gain, low collector-emitter saturation voltage, and low noise between 30Hz and 15kHz.


Infineon BC846‑BC850 NPN Silicon AF Transistors Datasheet - cover page
Brand
Infineon
Category
Transistor
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
189 KB
Published
06 April, 2012
Updated
30 September, 2023
Models
BC846, BC850
MD5 checksum
8B074D017F26D19A38A92486D1B6CFAE

About this manual

The BC846‑BC850 family comprises NPN silicon AF transistors designed for AF input stages and driver applications. They offer high current gain, low collector‑emitter saturation voltage, and low noise from 30 Hz to 15 kHz, making them suitable for audio and precision circuits.

The datasheet provides maximum ratings, DC and AC electrical characteristics, noise figures, and package information for the SOT‑23 devices, including values such as VCEO up to 65 V, Ic max 100 mA, transition frequency up to 250 MHz, and power dissipation of 330 mW.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • AC Characteristics
  • Noise Figure
  • Package Outline
  • Pin Configuration
  • Footprint
  • Marking Layout
  • Packing

Specifications

Collector‑emitter voltage (VCEO)65 V (BC846), 45 V (BC847), 30 V (BC848)
DC collector current (Ic)100 mA
Total power dissipation (Ptot)330 mW
Transition frequency (ft)250 MHz
Package typeSOT‑23

Frequently asked questions

What is the maximum collector‑emitter voltage for the BC846 transistor?

The BC846 can withstand up to 65 V between collector and emitter.

What package are the BC846‑BC850 transistors supplied in?

They are offered in a SOT‑23 surface‑mount package.

What is the maximum power dissipation rating for these transistors?

The maximum power dissipation is rated at 330 mW.

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