This document describes the features of the SPW17N80C3 Cool MOS™ power transistor, including new high voltage technology, worldwide best RDS(on) in TO 247 package, ultra low gate charge, periodic avalanche rating, and extreme dv/dt rating.
The SPW17N80C3 is a high‑voltage Cool MOS power transistor offered in a TO‑247 package. It features an 800 V drain‑source breakdown voltage, a low on‑state resistance of 0.29 Ω, and a continuous drain current of 17 A, making it suitable for high‑power electronic applications.
The datasheet lists maximum ratings, thermal characteristics, and detailed electrical parameters such as gate charge, capacitances, and switching times. Package dimensions and legal disclaimer information are also included.
| Drain‑source voltage (VDS) | 800 V |
|---|---|
| On‑state resistance (RDS(on)) | 0.29 Ω |
| Gate‑source voltage (VGS) | ±20 V (static), ±30 V AC |
| Power dissipation (Ptot) at 25 °C | 208 W |
| Junction‑to‑case thermal resistance (RthJC) | 0.6 K/W |
The drain‑source breakdown voltage is rated at 800 V.
RDS(on) is typically 0.29 Ω at VGS = 10 V and ID = 11 A.
Junction‑to‑case thermal resistance is 0.6 K/W and junction‑to‑ambient is 62 K/W.