IDT06S60C is a 2A 600V SiC Schottky diode from IDT. Its features are revolutionary semiconductor material - Silicon Carbide, switching behavior benchmark, no reverse recovery/ no forward recovery, no temperature influence on the switching behavior, high surge current capability, Pb-free lead plating; RoHS compliant, qualified according to JEDEC1) for target applications, breakdown voltage tested at 5mA2). This diode is specially designed for fast switching applications like CCM PFC and Motor Drives.
The IDTO6S60C thinQ! 2nd‑generation SiC Schottky diode is designed for fast‑switching applications such as CCM PFC and motor drives. It features a 600 V blocking voltage, low reverse recovery, and high surge current capability.
The document provides maximum ratings, thermal and electrical characteristics, typical forward and reverse curves, capacitance data, and mechanical outline dimensions, along with legal and safety notices.
| Blocking voltage (Voc) | 600 V |
|---|---|
| Continuous forward current | 6 A |
| RMS forward current | 9 A |
| Repetitive peak reverse voltage | 600 V |
| Power dissipation | 63 W |
The diode can conduct a continuous forward current of 6 A (RMS rating 9 A).
It is rated for a repetitive peak reverse voltage of 600 V.
The maximum power dissipation is 63 W at 25 °C.