IPI60R299CP CoolMOSTM Power Transistor features the lowest RONxQg, ultra low gate charge, extreme dv/dt rating and high peak current capability.
The IPIGOR299CP CoolMOS™ power transistor is designed for hard‑switching SMPS topologies and offers ultra‑low gate charge, high peak current capability, and excellent dv/dt performance. It is RoHS‑compliant and qualified according to JEDEC standards for target applications.
The datasheet lists maximum ratings, thermal characteristics, static and dynamic electrical parameters, gate‑charge data, and safe‑operating‑area curves. Detailed graphs of output and transfer characteristics are included, along with package dimensions and ordering information.
| Continuous drain current (Id) | 11 A |
|---|---|
| Pulsed drain current (Id,pulse) | 34 A |
| Drain‑source on‑state resistance (Rds(on)) | 0.27 Ω (typ) |
| Total gate charge (Qg) | 22 nC |
| Avalanche energy (single pulse) | 290 mJ |
| Thermal resistance, junction‑case (Rjc) | 1.3 K/W |
| Power dissipation (Pd) | 96 W at 25 °C |
| Drain‑source breakdown voltage (Vds) | 600 V |
The device can conduct a continuous drain current of 11 A at 25 °C.
The total gate charge is specified as 22 nC.
The transistor is rated for a drain‑source breakdown voltage of 600 V.
Typical Rds(on) is 0.27 Ω at 25 °C.