IPP50R350CP CoolMOSTM power transistor features the lowest figure-of-merit RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, etc. It is designed for hard- and soft-switching SMPS topologies, CCM PFC for Lamp Ballast, LCD & PDP TV, and PWM for Lamp Ballast, LCD & PDP TV.
The Infineon IPP50R350CP CoolMOS power transistor is presented with its key features, including ultra‑low gate charge, high peak current capability, and compliance with RoHS. The document lists the product summary, maximum ratings, and thermal characteristics for design reference.
Detailed electrical characteristics are provided, covering static and dynamic parameters such as drain‑source on‑state resistance, gate threshold voltage, avalanche energy, and capacitances. Additional sections describe safe operating area, power dissipation, and diode switching characteristics, along with mechanical outline dimensions.
| Continuous drain current (Id) | 10 A |
|---|---|
| Maximum pulsed drain current | 22 A |
| Power dissipation (PD) | 89 W |
The maximum continuous drain current is 10 A at 25 °C.
It can dissipate up to 89 W at 25 °C.