IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode is a high-performance Schottky diode from IDT. It features no reverse recovery and no forward recovery, no temperature influence of the switching behavior, high surge current capability, lead-free lead plating, RoHS compliance, JEDEC1) qualification, and is designed for fast switching applications such as CCM PFC and motor drives.
The IDT10S60C is a 2nd‑generation thin‑film SiC Schottky diode designed for fast‑switching applications such as CCM PFC and motor drives. It offers a 600 V reverse voltage rating, low forward voltage drop, and no reverse recovery time.
Key electrical ratings include a continuous forward current of 10 A, surge current capability up to 84 A, and a power dissipation of 100 W at 25 °C. The device is supplied in a PG‑TO220‑2‑2 package and operates over a temperature range of –55 °C to 175 °C.
| Reverse voltage (V_RRM) | 600 V |
|---|---|
| Continuous forward current (I_F) | 10 A |
| Forward voltage drop (V_F) at 10 A, 25 °C | 1.5‑1.7 V |
| Power dissipation (P_R) at 25 °C | 100 W |
| Thermal resistance, junction‑case (R_jc) | 1.5 K/W |
| Thermal resistance, junction‑ambient (R_ja) | 62 K/W |
| Operating temperature range | -55 °C to 175 °C |
| Package type | PG‑TO220‑2‑2 |
The diode is rated for a repetitive peak reverse voltage of 600 V.
It can conduct a continuous forward current of 10 A up to 140 °C.
The device can dissipate up to 100 W at a junction temperature of 25 °C.
It is supplied in a PG‑TO220‑2‑2 package.