SPU07N60S5 and SPD07N60S5 are CoolMOS™ power transistors with a voltage of 600V and an RDS(on) of 0.6Ω. They feature world-leading RDS(on), ultra-low gate charge, extreme dv/dt ratings, ultra-low effective capacitances and improved transconductance.
The SPU07N60S5 is a high‑voltage, ultra‑low‑gate‑charge MOSFET power transistor offered by Infineon Technologies. It is designed for applications requiring low on‑resistance, fast switching, and high avalanche energy capability.
Key specifications include a continuous drain current of 7.3 A, a maximum drain‑source voltage of 600 V, power dissipation of 83 W at 25 °C, and an operating temperature range from –55 °C to +150 °C. Detailed electrical characteristics, thermal data, and gate‑charge information are provided to aid designers in integrating the device into their circuits.
| Continuous drain current (I_D) @ 25 °C | 7.3 A |
|---|---|
| Maximum drain‑source voltage (V_DSS) | 600 V |
| Gate‑source voltage rating (V_GS) max | +20 V (DC), +30 V (AC) |
| Power dissipation @ 25 °C | 83 W |
| Operating temperature range | -55 °C to +150 °C |
| Output capacitance (C_oss) | 370 pF |
| Single‑pulse avalanche energy | 230 mJ |
The device can continuously conduct 7.3 A of drain current at an ambient temperature of 25 °C.
It can dissipate up to 83 W when the case temperature is 25 °C.
The maximum DC gate‑source voltage is +20 V, and the AC rating (f > 1 Hz) is +30 V.