IPB60R250CP is a power transistor with the lowest RONxQg, ultra-low gate charge, extreme dv/dt and high peak current capability.
The IPB60R250CP is a CoolMOS power transistor offered in a P‑TO263‑3 package. It is designed for hard‑switching SMPS topologies and features a low on‑state resistance, ultra‑low gate charge and high peak current capability.
The document lists maximum ratings, thermal characteristics, static and dynamic electrical parameters, as well as typical output and capacitance curves, and includes the mechanical outline dimensions for PCB layout.
| Continuous drain current (Id) | 12 A |
|---|---|
| Pulsed drain current (Id,pulse) | 40 A |
| On‑state resistance (Rds(on)) typical | 0.22 Ω |
| Gate‑threshold voltage (Vgs(th)) typical | 2.5 V |
| Maximum power dissipation (Pd) | 104 W |
| Operating temperature range | -55 °C to 150 °C |
| Package type | P‑TO263‑3 |
| Input capacitance (Ciss) | 1200 pF |
| Output capacitance (Coss) | 54 pF |
| Avalanche energy (single pulse) | 345 mJ |
The device can conduct a continuous drain current of 12 A at 25 °C.
It is supplied in a P‑TO263‑3 (D‑PAK) package.
Typical Rds(on) is 0.22 Ω at Vgs = 10 V and Id = 7.8 A.
The transistor can dissipate up to 104 W at 25 °C.