IPB50R250CP CoolMOSTM Power Transistor is a low-power, high-performance power transistor with the lowest RON x Qg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating, RoHS compliant, qualified according to JEDEC 1) for target applications.
The IPB50R250CP is a CoolMOS power transistor presented by Infineon Technologies. It is designed for hard and soft switching SMPS topologies, CCM PFC, and PWM applications such as ATX power supplies, notebook adapters, PDP and LCD TV.
The document provides maximum ratings, thermal and electrical characteristics, dynamic parameters, gate‑charge data, and mechanical outlines for the PG‑TO263‑3‑2 package. It also includes safety and legal notices from Infineon.
| Continuous drain current (Id) | 13 A |
|---|---|
| Pulsed drain current (Id,pulse) | 31 A |
| Drain‑source on‑state resistance (Rds(on)) typ | 0.22 Ω |
| Total gate charge (Qg) | 27 nC |
| Input capacitance (Ciss) | 1420 pF |
| Output capacitance (Coss) | 63 pF |
| Power dissipation (Pd) | 114 W |
| Operating temperature range | -55 °C to 150 °C |
| Package type | PG‑TO263‑3‑2 |
The maximum continuous drain current is 13 A at 25 °C.
It is supplied in a PG‑TO263‑3‑2 (TO‑263) surface‑mount package.
The typical drain‑source on‑state resistance is 0.22 Ω.
The input capacitance (Ciss) is 1420 pF.