IPB60R520CP is a CoolMOSTM power transistor that features the lowest RON x Qg figure-of-merit, ultra low gate charge, extreme dv/dt rating, high peak current capability and JEDEC1) qualification for target applications, Pb-free lead plating and RoHS compliance.
The IPB60R520CP is a CoolMOS power transistor designed for hard‑switching SMPS topologies. It features a low on‑resistance, ultra‑low gate charge, high peak current capability, and complies with RoHS and JEDEC standards.
The document lists maximum ratings, thermal characteristics, static and dynamic electrical parameters, gate‑charge data, and typical output characteristics, including power dissipation of 66 W at 25 °C and a continuous drain current of 6.8 A.
| Continuous drain current (Id) | 6.8 A |
|---|---|
| Pulsed drain current (Ipp) | 17 A |
| Power dissipation (P_D) | 66 W |
| Gate charge total (Qg) | 24‑31 nC |
| Package type | PG‑TO263 |
The maximum continuous drain current is 6.8 A at 25 °C.
The device can dissipate up to 66 W at 25 °C.
It is supplied in a PG‑TO263 (D‑PAK) package.
The total gate charge ranges from 24 nC to 31 nC.