Infineon IKP20N60T IGBT Datasheet

This datasheet mainly introduces the parameter information of IKP20N60T and IKW20N60T two IGBTs, including rated voltage, rated current, collector-emitter compression voltage, maximum junction temperature, marking, and package.


Infineon IKP20N60T IGBT Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
14
File format
PDF
File size
457 KB
Published
06 April, 2012
Updated
30 September, 2023
MD5 checksum
975C48BC4954D6E37F7C6460EE187837

About this manual

The IKP20N60T is a 600 V, 20 A TrenchStop® IGBT designed for frequency converters and UPS applications. It features low on‑state voltage, low gate charge, and a fast‑recovery anti‑parallel diode.

Key data include a collector‑emitter voltage rating of 600 V, a maximum power dissipation of 166 W at 25 °C, and a junction‑to‑case thermal resistance of 0.9 K/W. Switching characteristics such as turn‑on delay (18 ns at 25 °C) and turn‑off delay (12 ns) are also listed, together with typical output and capacitance curves.

What's inside

  • Maximum Ratings
  • Thermal Resistance
  • Electrical Characteristics
  • Switching Characteristics
  • Typical Output Characteristics
  • Typical Switching Times
  • Typical Switching Energy Losses
  • Gate Charge
  • Short Circuit Withstand
  • Capacitance

Specifications

Collector‑emitter voltage (VCE)600 V
Maximum pulsed collector current60 A
Gate‑emitter voltage (VGE)+20 V
Power dissipation at 25 °C166 W

Frequently asked questions

What is the maximum collector‑emitter voltage rating?

The device is rated for a maximum collector‑emitter voltage of 600 V.

What is the typical turn‑on delay time at 25 °C?

The typical turn‑on delay time is 18 ns at a junction temperature of 25 °C.

How much power can the IGBT dissipate at 25 °C case temperature?

It can dissipate up to 166 W when the case temperature is 25 °C.

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