This datasheet provides the characteristics parameters for SMBT3904.MMBT3904. This model is a NPN silicon switching transistor with high DC current gain, low collector-emitter saturation voltage, etc. The SMBT3904S / U type has 2 internal isolated transistors with good matching.
The document provides detailed specifications for the Infineon SMBT3904 and MMBT3904 NPN silicon switching transistors. It includes maximum ratings, thermal resistance, DC and AC electrical characteristics, test circuits, permissible pulse loads, and package dimensions.
Additional information such as storage conditions, safety warnings, and contact details for Infineon Technologies are included at the end of the sheet.
| Collector‑emitter voltage (VCEO) | 40 V |
|---|---|
| Collector‑base voltage (VCBO) | 60 V |
| Emitter‑base voltage (VEB0) | 6 V |
| Collector current (IC) | 200 mA |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -65 … 150 °C |
| Collector‑emitter saturation voltage (VCEsat, typical) | 0.2 V |
| Base‑emitter saturation voltage (VBEsat, typical) | 0.65 V |
The maximum collector‑emitter voltage is 40 V.
Typical VCEsat is 0.2 V.
The device can be stored from –65 °C up to 150 °C.