IPA60R250CP is a CoolMOS® power transistor, which has the lowest RONxQg figure of merit, ultra low gate charge 6.6, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, lead-free lead plating, RoHS compliant. CoolMOS CP is designed for: • Hard switching SMPS topologies.
The IPA60R250CP is a CoolMOS® power transistor offered in a PG‑TO220FP package. It is designed for hard‑switching SMPS topologies and features a low on‑state resistance, ultra‑low gate charge, and high peak current capability. The device complies with JEDEC qualification and RoHS requirements.
The document lists electrical, thermal, and dynamic characteristics, including continuous and pulsed drain currents, avalanche energy, on‑state resistance, gate charge, capacitances, and diode parameters, as well as safe operating area and transient thermal impedance curves. Package dimensions and mechanical data are also provided.
| Continuous Drain Current (Id) | 12 A |
|---|---|
| Pulsed Drain Current (Id,pulse) | 40 A |
| Maximum Power Dissipation (P_D) | 33 W |
| On‑State Resistance (Rds(on)) Typical | 0.22 Ω |
| Gate Charge Total (Qg) at Vgs=10 V | 26 nC |
| Output Capacitance (Coss) | 65 pF |
| Reverse Diode Forward Voltage | 0.9 V – 1.2 V |
The IPA60R250CP can handle a continuous drain current of 12 A at 25 °C.
The typical on‑state resistance (Rds(on)) is 0.22 Ω at a gate‑source voltage of 10 V and 25 °C.
It is supplied in a PG‑TO220FP (TO‑220) package.