This datasheet provides the parameters of SPP07N60C3, SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor, including maximum voltage, on-resistance, rated current, package type, model, ordering code, etc.
This document describes the SPP07N60C3 power MOSFET from Infineon Technologies, including its package options, maximum ratings and characteristic curves. It is intended for designers who need detailed parameters for circuit design and reliability analysis.
Key sections cover maximum continuous drain current, avalanche energy, breakdown voltage, gate threshold, on‑state resistance, thermal resistance and safe operating area, together with typical switching and transient performance data.
| Continuous drain current (Id) | 7.3 A |
|---|---|
| Avalanche energy (single pulse) | 230 mJ |
| Package | PG‑TO220‑3 |
The device can conduct a continuous drain current of 7.3 A at a case temperature of 25 °C.
It is rated for a single‑pulse avalanche energy of 230 mJ.