This is a new type of high voltage technology power transistor with extremely low RDS(on), high peak current capability, improved transconductance, and P-TO-220-3-31 fully isolated package (2500VAC; 1 minute).
The SPP20N60C3 is a high‑voltage power MOSFET offered in several TO‑220 and TO‑263 packages. It features a low on‑resistance of 0.19 Ω, high continuous drain current of 20.7 A, and a maximum drain‑source voltage of 480 V.
The datasheet provides detailed maximum ratings, thermal parameters, switching characteristics, and package dimensions, along with safety and handling notes for designers of power‑electronics applications. This manual is written in Chinese.
| Drain‑Source Voltage (VDS) Max | 480 V |
|---|---|
| On‑Resistance (RDS(on)) Typical | 0.19 Ω |
| Power Dissipation (Ptot) @ 25 °C | 34.5 W |
The device can withstand up to 480 V between drain and source.
The typical RDS(on) is 0.19 Ω.
It can dissipate up to 34.5 W at a case temperature of 25 °C.