IPW90R1K0C3 CoolMOS™ Power Transistor is a low-on-resistance power transistor with an extremely low Qg and high dv/dt rating.
The IPW90R1K0C3 is a 900 V CoolMOS power transistor designed for quasi‑resonant flyback and forward topologies, industrial SMPS, and consumer applications. It offers a low figure‑of‑merit (RDS·Q), ultra‑low gate charge, high peak current capability, and ROHS‑compliant Pb‑free construction.
The document lists maximum ratings, thermal characteristics, static and dynamic electrical parameters, gate‑charge data, and typical output and transfer characteristics. Package dimensions, mechanical drawing, and legal disclaimer are also included.
| Continuous drain current (Id) | 5.7 A (25 °C) |
|---|---|
| Pulsed drain current (Id,pulse) | 12 A (25 °C) |
| Drain‑source on‑state resistance (RDS(on)) | 0.78 Ω (typical, 25 °C) |
| Total gate charge (Qg) | 34 nC |
| Maximum power dissipation (Pd) | 89 W (25 °C) |
| Package | TO‑247 (PG‑TO247) |
The device can handle a continuous drain current of 5.7 A at 25 °C.
The typical drain‑source on‑state resistance is 0.78 Ω at 25 °C.
It can dissipate up to 89 W at an ambient temperature of 25 °C.
The transistor is supplied in a TO‑247 (PG‑TO247) package.