This document describes the features and characteristics of the IKW75N60T TrenchStop® Series q Power Semiconductors, including the Low Loss DuoPack design, very low VCE(sat), maximum junction temperature of 175°C, short circuit withstand time of 5µs, positive temperature coefficient in VCE(sat), very tight parameter distribution, high ruggedness, temperature stable behavior, very high switching speed, low EMI, and very soft, fast recovery anti-parallel EmCon HE diode.
This datasheet describes the IKW75N60T IGBT from Infineon's TrenchStop® series. It lists the device’s maximum ratings, thermal characteristics, static and dynamic electrical parameters, and switching performance under various temperatures and load conditions.
The document also includes typical output and transfer characteristics, gate charge and capacitance data, and safety information such as RoHS compliance and legal disclaimer. It is intended for designers of frequency converters, UPS systems and other power electronics applications.
| Collector‑emitter voltage (VCE) | 600 V |
|---|---|
| Continuous collector current (IC) | 75 A |
| Gate‑emitter voltage (VGE) | +20 V |
| Power dissipation at 25 °C case temperature | 428 W |
| Operating junction temperature range | -40 °C to 175 °C |
| Thermal resistance, junction‑to‑case (RthJC) | 0.35 K/W |
| Diode forward voltage at 25 °C | 1.65 V |
| Turn‑on delay time at 25 °C | 33 ns |
The IKW75N60T is rated for a maximum collector‑emitter voltage of 600 V.
It can conduct up to 75 A continuously.
The typical gate‑emitter voltage is +20 V.
It can dissipate up to 428 W at a 25 °C case temperature.