This datasheet is SPI20N60CFD Cool MOS™ Power Transistor parameter table, including maximum voltage, current, power consumption and other characteristics
The SPI20N60CFD is a high‑voltage power MOSFET in a TO‑262 package, offering a low on‑state resistance of 0.22 Ω and a maximum drain‑source voltage of 480 V. It features ultra‑low gate charge, periodic avalanche rating, and an intrinsic fast‑recovery body diode suitable for high‑power applications.
The document provides detailed electrical and thermal characteristics, maximum ratings, typical output curves, and gate‑charge data, along with packaging information and safety notices from Infineon Technologies AG.
| Maximum Drain‑Source Voltage (VDS) | 480 V |
|---|---|
| On‑State Resistance (RDS(on)) | 0.22 Ω (typ) |
| Thermal Resistance, Junction‑to‑Case (RthJC) | 0.6 K/W |
| Maximum Power Dissipation (Ptot) at 25 °C | 208 W |
The device is rated for a maximum drain‑source voltage of 480 V.
Typical RDS(on) is 0.22 Ω at VGS = 10 V and ID = 13.1 A.
The junction‑to‑case thermal resistance is 0.6 K/W.