IKW08T120 is a TrenchStop® Series Power Semiconductors IGBT from Infineon, it has soft recovery and fast recovery characteristics, suitable for frequency converters and uninterruptible power supply applications.
The IKW08T120 is a 1200 V, 8 A IGBT from Infineon's TrenchStop® series, featuring low loss, low EMI and a fast‑recovery anti‑parallel diode. It is intended for use in frequency converters and uninterruptible power supplies.
The datasheet lists maximum ratings, thermal resistance values, static and dynamic electrical characteristics, and detailed switching behavior, along with typical output curves and definitions of switching times and losses.
| Collector‑emitter voltage (VCE) | 1200 V |
|---|---|
| DC collector current (IC) | 8 A |
| Power dissipation (PD) | 70 W |
| Operating junction temperature (Tj) | -40 °C … +150 °C |
| Thermal resistance, junction‑case (RthJC) | 1.7 K/W |
| Gate‑emitter voltage (VGE) | +20 V |
| Short‑circuit withstand time | 10 µs |
| Input capacitance (Ciss) | 600 pF |
| Output capacitance (Coss) | 36 pF |
| Reverse transfer capacitance (Crss) | 28 pF |
The maximum collector‑emitter voltage is 1200 V.
The device can dissipate up to 70 W (at a case temperature of 25 °C).
The junction can operate from –40 °C up to +150 °C.
It can tolerate a short circuit for up to 10 µs.