This document introduces the IKP15N60T TrenchStop® series power semiconductors, which are low-loss and fast-recovery anti-parallel EmCon HE diodes. The product has a very low VCE(sat) value, maximum junction temperature of 175°C, and short circuit withstand time of 5µs. It is designed for applications such as frequency converters and uninterrupted power supply. The TrenchStop® and Fieldstop technology for 600 V applications offers tight parameter distribution, high ruggedness, temperature stable behavior, and very high switching speed.
The Infineon IKP15N60T is a 600 V, 15 A IGBT featuring TrenchStop® and Fieldstop technology for low loss and fast switching. It is designed for use in frequency converters, UPS systems and other power electronics applications.
The datasheet provides maximum ratings, thermal characteristics, electrical parameters, switching behavior, and typical performance curves, along with safety and handling information.
| Collector‑emitter voltage (VCE) | 600 V |
|---|---|
| Continuous collector current (IC) | 15 A |
| Gate‑emitter voltage (VGE) | 20 V |
| Power dissipation at 25 °C (PD) | 130 W |
| Operating junction temperature range | -40 °C to 175 °C |
| Thermal resistance, junction‑to‑case (RthJC) | 1.15 K·W |
| Typical gate charge (Qg) | 87 nC |
| Short‑circuit withstand time | 5 µs |
The device can block up to 600 V between collector and emitter.
It is rated for a continuous collector current of 15 A.
The typical gate charge is 87 nC at 15 A collector current.
It can dissipate up to 130 W when the case temperature is 25 °C.